Perfect separation between different orientation regions in hybrid orientation structure grown by orientation selective epitaxy

2016 Fiscal Year Final Research Report

• Project/Area Number: 26390067
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Iwaki Meisei University
• Principal Investigator: Inoue Tomoyasu いわき明星大学, 科学技術学部, 教授 (60193596)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 薄膜 / 方位選択エピタキシャル成長

Outline of Final Research Achievements

We have studied orientation selective epitaxial (OSE) growth of cerium dioxide (CeO2) layers on Si(100) substrates, which is enabled by surface potential modification during the growth process. Adopting an electron beam irradiation method, we attained the successful results of the hybrid orientation structure (HOS) of CeO2(100) and (110) areas on Si(100) substrates. There exists a transition region containing both orientation components between the two orientation areas and its width decreases proportionally as the logarithm of underlying Si substrate resistivity. With the aim of perfect isolation of the two orientation areas, we have succeeded in HOS fabrication using silicon on insulator substrates with lithographically formed trenches.

Free Research Field

工学