Electric induced ionization dynamics of single dopant atom observed by low temperature scanning tunneling microscopy

2016 Fiscal Year Final Research Report

• Project/Area Number: 26390071
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Naitou Yuichi 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員 (80392637)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 走査型プローブ顕微鏡 / 走査型容量顕微鏡 / グラフェン / ドーズ / ヘリウムイオン / ヘリウムイオン顕微鏡 / 金属ー絶縁体転移 / アンダーソン局在

Outline of Final Research Achievements

Helium ion microscopy (HIM) was used for direct nano-patterning of single-layer graphene (SLG) on SiO2/Si substrates. This technique involves irradiation of the sample with accelerated helium ions (Heþ). Doses of 2.01016Heþcm2 from a 30 kV beam induced a metal-insulator transition in the SLG. The resolution of HIM patterning on SLG was investigated by fabricating nanoribbons and nanostructures. Analysis of scanning capacitance microscopy measurements revealed that the spatial resolution of HIM patterning depended on the dosage of Heþ in a non-monotonic fashion. Increasing the dose from 2.01016 to 5.01016Heþcm2 improved the spatial resolution to several tens of nanometers. However, doses greater than 1.01017Heþcm2 degraded the patterning characteristics. Direct patterning using HIM is a versatile approach to graphene fabrication and can be applied to graphene-based devices.

Free Research Field

走査型プローブ顕微鏡