XPS Study on ultra thin SiO2 film formed on Si substrates with several surface orientations

2016 Fiscal Year Final Research Report

• Project/Area Number: 26390072
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Japan Aerospace EXploration Agency
• Principal Investigator: Hirose Kazuyuki 国立研究開発法人宇宙航空研究開発機構, 宇宙科学研究所, 教授 (00280553)
• Co-Investigator(Renkei-kenkyūsha): NOHIRA Hiroshi 東京都市大学, 工学部・電気電子工学科, 教授 (30241110) ; KOBAYASHI Daisuke 国立研究開発法人宇宙航空研究開発機構, 宇宙科学研究所, 助教 (90415894)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: SiO2 / interface / amorphous / XPS / XANES / defect

Outline of Final Research Achievements

We studied 1nm-SiO2 films thermally grown on Si(100), Si(110), and (111) substrates by using x-ray photoelectron spectroscopy and x-ray absorption near edge structure spectroscopy. We found the amorphous structure in terms of density, Si-O-Si bond angle, and arrangement differs among those samples. Those difference is considered to be responsible for observed difference in defect density for 1-nm thick SiO2 films. Therefore reliability of gate Si oxide will be dependent on the orientation of Si surfaces which is oxidized during the 3-dimensional MOSFET process.

Free Research Field

interface physics