2016 Fiscal Year Final Research Report
Photo-detection using a sinusoidally gated silicon avalanche photodiode
| Project/Area Number |
26390087
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Optical engineering, Photon science
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| Research Institution | Nihon University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | 単一光子検出 / シリコン雪崩フォトダイオード |
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| Outline of Final Research Achievements |
In this research, the single-photon detector with a very high detection efficiency using a silicon avalanche photodiode (Si-APD). Si-SPAD was driven by the open-terminated gated passive quenching circuit (OT-GPQC). The OT-GPQC realizes the gate operation of the Si-APD with a reverse bias voltage of 37 V over the breakdown voltage and a gate duration of 4 ns (corresponds to a response time of the Si-SPAD). The very-high-voltage and short gate operation extremely enhanced the avalanche detection probability: the photo-excited carrier grows into detectable macroscopic current, without significant increase of noise counts. Finally the avalanche detection probability of 99% was achieved. The tested Si-APD then has a quantum efficiency of 85.6% at a wavelength of 780 nm. Therefore, the Si-APD operated with the OT-GPQC has had a single-photon detection efficiency of 85.2% with a dark count probability per gate of 10-6.
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| Free Research Field |
量子光学
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