Development of thin film preparation process by back-surface irradiation PLD method using powder targets

2016 Fiscal Year Final Research Report

• Project/Area Number: 26390099
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Plasma electronics
• Research Institution: Ishikawa National College of Technology (2016); Sasebo National College of Technology (2014-2015)
• Principal Investigator: Suda Yoshiaki 石川工業高等専門学校, その他部局等, 校長 (20124141)
• Co-Investigator(Renkei-kenkyūsha): Kawasaki Hiroharu 佐世保工業高等専門学校, 電気電子工学科, 教授 (10253494) ; Ohshima Tamiko 佐世保工業高等専門学校, 電気電子工学科, 准教授 (00370049) ; Yagyu Yoshihito 佐世保工業高等専門学校, 電気電子工学科, 准教授 (40435483) ; Ihara Takeshi 佐世保工業高等専門学校, 電気電子工学科, 助教 (30634050)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: パルスレーザデポジション / プラズマプロセス / 薄膜 / PLD / 裏面照射 / 粉体ターゲット

Outline of Final Research Achievements

A new functional thin-film deposition method named the back-surface irradiation pulsed laser deposition (BIPLD) method was developed. Several kinds of functional thin films were deposited using this BIPLD. In this BIPLD method, powder targets were used as the film source placed on a transparent target holder, and then a pulsed laser was irradiated from the holder side to the substrate. Using this new method, TiO2 and BN thin films were deposited on the silicon substrate. The deposition rate of the films prepared by using this method was calculated from film thickness and deposition time to be much lower than that of the films prepared by conventional PLD. XRD measurement results suggest that rutile and anatase TiO2 crystal peaks were formed for the films prepared using the TiO2 rutile powder target. Crystal peaks of hBN were observed for the films prepared using the BN powder target. The crystallinity of the prepared films was changed by annealing after deposition.

Free Research Field

プラズマ理工学