Vibrational modes and symmetry of wire-type phononic crystals composed of III-V semiconductors

2017 Fiscal Year Final Research Report

• Project/Area Number: 26390100
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: General applied physics
• Research Institution: Hokkaido University
• Principal Investigator: Mizuno Seiji 北海道大学, 工学研究院, 講師 (90222322)
• Co-Investigator(Kenkyū-buntansha): 田中 之博 北海道大学, 工学研究院, 助教 (00281791) ; 西口 規彦 北海道大学, 工学研究院, 教授 (40175518)
• Project Period (FY): 2014-04-01 – 2018-03-31
• Keywords: フォノニック結晶 / ナノワイヤー / フォノン

Outline of Final Research Achievements

We developed the algorithm to calculate phonon dispersion relations and displacement　fields of the wire-type phononic crystals composed of III-V semiconductors. By using this algorithm, phonon dispersion relations corresponding to each mode can be separately calculated, depending on the symmetry of the cross-section and constituent materials. We theoretically examined the coherent guided acoustic phonons generated and observed in a GaN/AlN nanowire superlattice with the use of ultrafast pump-probe spectroscopy. The propagation processes of the observed acoustic phonons are reexamined based on our numerical results. In addition, we studied the dispersion relations for hollow GaN nanowires, and discussed the effect of the hollow structure on the eigenfrequencies of each mode.

Free Research Field

工学