Nanostructured thermoelectric oxide thin films for highly efficient energy conversion

2016 Fiscal Year Final Research Report

• Project/Area Number: 26390103
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: General applied physics
• Research Institution: Muroran Institute of Technology (2015-2016); Hiroshima University (2014)
• Principal Investigator: Mele Paolo 室蘭工業大学, 工学研究科, 准教授 (70608504)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 熱電材料 / 酸化物 / 薄膜 / ナノ粒子 / 熱伝導率 / 熱電薄膜モジュール

Outline of Final Research Achievements

Efficiency of thermoelectric conversion in oxide thin film was investigated and very promising results were obtained. For example, n-type Al-doped ZnO (AZO) thin film processed by PLD (Pulsed Laser Deposition)method has shown the following characteristics: k = 4.89 W / m × K (1/7 of the bulk AZO) at 300 K, ZT = 0.045 (3 times larger than bulk AZO) [S. Saini, P. Mele et al. Japan. J. Appl. Phys. 53 (2014) 060306]. Then, a thermoelectric thin film module was fabricated on Al2O3, SrTiO3 crystal substrates and silica glass by PLD. The thermoelectric thin film module was composed by 5 legs of n type (Al 0.02 Zn 0.98 O) and 5 legs of p type (Ca3Co4O9) thin films. Maximum output power (Pmax) = 29.9 pW was obtained on Al2O3 single crystal substrate applying a temperature difference of 230 degrees (with high temperature of 300 degrees) [S. Saini, P. Mele, A. Tiwari et al, Energy Conv . And Manag. 114 (2016) 251].

Free Research Field

材料物理