Optical injection of spin-polarized carriers in indirect gap semiconductors

2016 Fiscal Year Final Research Report

• Project/Area Number: 26400317
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Condensed matter physics I
• Research Institution: Kyoto University
• Principal Investigator: Naka Nobuko 京都大学, 理学研究科, 准教授 (10292830)
• Research Collaborator: STOLZ Heinrich ロストク大学, 物理学科, 教授
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 光キャリア / 間接遷移型半導体 / スピン緩和

Outline of Final Research Achievements

Indirect bandgap semiconductors including silicon are currently a major focus of research for solar cell and spin device applications. However, there had been no report on the spin relaxation time of optically injected delocalized carriers in diamond. In this study, we demonstrated optical injection of spin-polarized carriers in indirect bandgap semiconductors, which paves a way to the versatile applications of spin and momentum degrees of freedom.

Free Research Field

光物性物理学