Direct observations of channel regions of electric double layer transistor using atomic force microsocopy

2017 Fiscal Year Final Research Report

• Project/Area Number: 26410092
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Functional solid state chemistry
• Research Institution: Institute of Physical and Chemical Research (2015-2017); Osaka University (2014)
• Principal Investigator: Yokota Yasuyuki 国立研究開発法人理化学研究所, Kim表面界面科学研究室, 研究員 (00455370)
• Co-Investigator(Renkei-kenkyūsha): TAKEYA Jun-ichi 東京大学, 新領域創成科学研究科, 教授 (20371289) ; UEMURA Takafumi 東京大学, 新領域創成科学研究科, 講師 (30448097)
• Project Period (FY): 2014-04-01 – 2018-03-31
• Keywords: 電気二重層トランジスタ / 原子間力顕微鏡 / イオン液体 / 有機半導体 / 古典分子動力学計算

Outline of Final Research Achievements

To achieve high charge carrier densities with minimum applying voltages, electric double layer field effect transistors (EDL-FETs), where the conventional solid dielectrics are replaced with electrolytes such as ionic liquids (ILs) to form EDL at the electrolyte / semiconductor interface, have been intensively investigated. Microscopic understandings of the carrier transport and the long-term stability of EDL-FETs using ILs have been very limited due to the complexity of the IL / semiconductor interfaces. In this study, we directly visualized the interface using atomic force microscopy, revealing the relationship between the device performance and the step density of the semiconductor.

Free Research Field

表面電気化学