Development of electric field assisted lapping technology for SiC semiconductor substrate

2016 Fiscal Year Final Research Report

• Project/Area Number: 26420068
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Production engineering/Processing studies
• Research Institution: Akita Industrial Technology Center
• Principal Investigator: KUSUMI Takayuki 秋田県産業技術センター, 素形材プロセス開発部, 主任研究員 (40370233)
• Co-Investigator(Renkei-kenkyūsha): AKAGAMI Yoichi 秋田県産業技術センター, 副所長 (00373217)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: スラリー / 研磨 / ラッピング / 電界 / 半導体 / ウェーハ

Outline of Final Research Achievements

In order to contribute to the spread of silicon carbide wafer semiconductors, we propose a new "electric field assisted lapping technique" compatible with improvement of surface quality and processing efficiency in lapping process of substrate processing. Through observation experiments, it was found that the dispersion of abrasive grains due to electric field has applied frequency dependency and natural frequency exists. We also performed an electric field assisted lapping experiment using sapphire as a sample to confirm the effect of improving lapping efficiency and the effect of improving surface roughness.

Free Research Field

精密加工