Investigation of formation mechanism of crystal defects induced by machining at the surface of single crystal SiC

2016 Fiscal Year Final Research Report

• Project/Area Number: 26420071
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Production engineering/Processing studies
• Research Institution: Japan Fine Ceramics Center
• Principal Investigator: ISHIKAWA Yukari 一般財団法人ファインセラミックスセンター, その他部局等, 主席研究員 (60416196)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 材料工学 / 単結晶 / 加工 / 潜傷 / 転位 / 積層欠陥

Outline of Final Research Achievements

We investigated the defect structures in 4H-SiC single crystal induced by the model machining under control of abrasive motion. Wiresawing with fixed abrasive i.e. machining with abrasive translation uniformly introduced defects: high density defective layer, dislocation half loops, and stacking faults. On the other hand, distributed defects: stacking fault and triangular defective area with dislocation half-loop bundle were formed after wiresawing with loose abrasive i.e. machining with abrasive translation and rotation.

Free Research Field

材料工学