2016 Fiscal Year Final Research Report
The measurements of Czochralski melt flow under the rotational magnetic field and the electromagnetic field for the high quality crystal growth.
| Project/Area Number |
26420151
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thermal engineering
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| Research Institution | Oita University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | 対流伝熱 / チョクラルスキー法 / 液体金属 / 回転磁場 / 電流－磁場印加 / 超音波ドップラー法 / 数値シミュレーション |
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| Outline of Final Research Achievements |
Experimental and numerical studies were carried out for Czochralski melt convection under the rotational magnetic field and the electromagnetic field. A silicon single crystal for the semiconductor is mainly manufactured by Czochralski method. The quality of grown crystal is determined by the melt flow, so that the static magnetic field applied the melt to control the melt convection, nowadays. The model experiment using Gallium melt was carried out under the rotational magnetic field and the electromagnetic field. In addition, the numerical computation was carried out to visualize the melt convection under the rotational magnetic field. The rotational magnetic field and the electromagnetic field had an advantage to control the melt convection than the traditional static magnetic field in spite of the weak magnetic field.
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| Free Research Field |
熱工学
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