2016 Fiscal Year Final Research Report
Remote measurement of junction temperature of LEDs using pulsed-laser Raman scattering spectroscopy
Project/Area Number |
26420237
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Power engineering/Power conversion/Electric machinery
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Research Institution | Kyushu University |
Principal Investigator |
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Project Period (FY) |
2014-04-01 – 2017-03-31
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Keywords | LED / ジャンクション温度 / パルスレーザー / ラマン散乱 / GaN / 蛍光樹脂 / 温度分布 / 同時計測 |
Outline of Final Research Achievements |
A novel method by using a pulsed-laser Raman scattering technique was employed to estimate junction temperatures of several chips arranged on a straight line in a phosphor-less blue-LED package and a phosphor-deposited blue-LED (white-LED) package. Simultaneous observation of GaN-E2H Raman spectra from the several chips was done successfully by using a sheet-shaped laser beam. This technique was applied to estimation of the junction temperatures of the several chips in the phosphor-less blue LED package during operation. Also, the GaN-E2H Raman signal from the white-LED was observed for the first time by using a 633 nm laser reducing the influence of the phosphor and the scatterer on the Raman measurement. It is concluded that this technique would be a useful method for remoteness and simultaneous multipoint measurement of the junction temperature of a white-LED package in which several chips are integrated.
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Free Research Field |
工学
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