Development of Practical Technology for Ic-Enhancement in (Cu, C)-system Rare-Earth Less Superconducting Thin Films

2016 Fiscal Year Final Research Report

• Project/Area Number: 26420275
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kagoshima University
• Principal Investigator: TERADA Norio 鹿児島大学, 理工学域工学系, 教授 (20322323)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 超伝導材料 / 表面・界面物性 / 薄膜 / レアアース・レス

Outline of Final Research Achievements

The key technologies for expanding superconducting region of (Cu, C)-1201 based artificial stack structure which is represented with interfacial strain assisted superconductivity, rare-earth less feature, low growth temperature and Tc about 50 K, and for practical fabrication technique have been investigated.
Introducing of the atomically flat SrCuO2 buffer layer between the 1201 layer and substrate expands the regions where the interfacial stress effect takes places. It leads an increase of the volume fraction of superconducting regions in the structure, an increase of critical current per unit sample-width and jump up of superconducting transition temperature. Moreover, in the PLD synthesis using single compound target, growth conditions for the superconducting (Cu, C)-films are established. These results mean the objectives of this research are successfully achieved.

Free Research Field

超伝導材料・素子、太陽電池、電子分光