2016 Fiscal Year Final Research Report
Research on development of new type-II hetero materials and device applications
| Project/Area Number |
26420279
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Sophia University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | InP基板 / Ⅱ-Ⅵ族化合物半導体 / タイプⅡヘテロ材料 / 分子線エピタキシー / 伝導帯バンド不連続 / 光デバイス / 共鳴トンネルダイオード / 負性抵抗 |
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| Outline of Final Research Achievements |
Characterization and device applications of II-VI compound semiconductor type-II hetero materials on InP substrates were proceeded. A method to evaluate conduction band discontinuities of ZnCdSe/BeZnTe hetero junctions using n-i-n diodes was proposed. Optical absorption characteristics of ZnCdSe/BeZnTe type-II superlattices were evaluated by photovoltage spectrum measurements, and compared with photoluminescence characteristics. Carrier injection efficiencies in laser structures were theoretically investigated to optimize the structures, which were experimentally confirmed. MgSe/ZnCdSe resonant tunneling diodes were fabricated, observing clear negative differential resistances in applied voltage versus injection current characteristics at room temperature.
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| Free Research Field |
化合物半導体の分子線エピタキシャル成長及びデバイス応用
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