2016 Fiscal Year Final Research Report
Application of silicon carbonitride films to the charge trapping nonvolatile memories
| Project/Area Number |
26420280
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokai University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | 不揮発性メモリ / シリコン炭窒化膜 / 電荷トラップ / フラッシュメモリ |
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| Outline of Final Research Achievements |
The carrier injection and trapping phenomena in silicon carbonitride（SiCN) films were studied for the charge trapping nonvolatile memory applications. First, it was found that the erasing speed of the SiCN memory was one order of magnitude higher than that of the memory with a silicon nitride charge trapping film. The low energy barrier for hole injection in the SiCN memory was suggested to be responsible for the high erasing speed. Next, the energy depth of electrons trapped in the SiCN film was obtained to be comparable with that in the silicon nitiride film. Additionally, the conduction band offset at the SiCN-SiO2 interface was larger than that at the silicon nitride-SiO2 interface. These two characteristics would provide a low tunneling probability of electrons from trap states to silicon in the SiCN memory and would be responsible for the better electron retention characteristics at low temperatures obtained in the SiCN memory.
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| Free Research Field |
半導体デバイス工学、電気電子材料工学
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