Research on high-k germanates and their direct formations on germanium substrates at low-temperature

2016 Fiscal Year Final Research Report

• Project/Area Number: 26420281
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo University of Science, Suwa
• Principal Investigator: Fukuda Yukio 諏訪東京理科大学, 工学部, 教授 (50367546)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 誘電体薄膜 / 表面・界面物性 / 超薄膜 / MOS構造 / プラズマ酸化 / 原子層堆積法 / 金属ジャーマネイト / ゲルマニウム

Outline of Final Research Achievements

In the present research subject, we have investigated background kinetics of metal-germanate formations on germanium substrates by radical-enhanced atomic layer deposition (REALD), where microwave-generated oxygen radicals are used as an oxidant of surface-adsorbed metal precursors, and its application to the formations of gate-dielectrics of Ge-MOSFETs. We have found that argon ions with kinetic energies of ~5 eV enhance the germanate formations. We have also succeeded in the formations of Ge-MOS capacitor with an oxide-equivalent thickness of 1 nm.

Free Research Field

工学