Investigation on hydrogen interaction with nitride-based semiconductor metal/semiconductor interfaces

2016 Fiscal Year Final Research Report

• Project/Area Number: 26420286
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: Irokawa Yoshihiro 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点 電気・電子機能分野 ワイドバンドギャップ材料グループ, 主任研究員 (90394832)
• Co-Investigator(Renkei-kenkyūsha): Nakano Yoshitaka 中部大学, 工学部電子情報工学科, 教授 (60394722)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 水素 / 窒化物半導体 / 界面

Outline of Final Research Achievements

The interaction of hydrogen with semiconductor devices has long been studied. Intensive research has led to a model which attributes the reaction mechanism of the devices to hydrogen to the formation of a hydrogen-induced dipole layer at the metal-dielectric interface. Here, I showed that hydrogen does not create an electric double layer at the interface but change the property of the dielectric, resulting in the hydrogen sensitivity of the devices.

Free Research Field

半導体光学