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2016 Fiscal Year Final Research Report

Approaches to 10 times intensification of rare-earth doped materials: Identification of luminescence quenching factors using microwave absorption properties

Research Project

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Project/Area Number 26420287
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionNational Institute for Materials Science

Principal Investigator

ISHII Masashi  国立研究開発法人物質・材料研究機構, 先端材料解析研究拠点 表界面物理計測グループ, 主幹研究員 (90281667)

Research Collaborator Hamilton Bruce  
FUJIWARA Yasufumi  
Taikan OHMI  
Crowe Iain  
FUCHI Shingo  
YOSHIKAZU Takeda  
HIROSAKI Naoto  
KOIZUMI Atsushi  
YOSHIMATSU Ryo  
Project Period (FY) 2014-04-01 – 2017-03-31
Keywords希土類 / マイクロ波 / 蛍光体 / 半導体 / 伝搬係数 / 高調波 / 応答解析 / ノイズ分析
Outline of Final Research Achievements

Since rare-earths are luminous at various wavelengths intrinsic to the elements, assembling rare-earth doped materials into devices realizes selectable-color emitters suitable for diverse industrial purposes. The rare-earth dopants which couple with surroundings electronically and/or energetically may have positive and negative effects in the emission intensity. We identified the atomic scale interactions by using electromagnetic technique in microwave region. Various high frequency properties such as microwave propagation, charge response, emission response, propagation of harmonics, and electronic noise, are successfully applied to the evaluations of local charge and energy transfers/dissipations. The microwave properties explained emission properties of the doped rare-earth consistently. From the results, guidelines for intensification of frontier devices such as GaN:Eu red LED are drawn up.

Free Research Field

電子物性計測

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Published: 2018-03-22  

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