Precise controls and fundamental understandings of oxidation reactions to for ultrathin oxides at Ge surfaces for future nano-devices

2016 Fiscal Year Final Research Report

• Project/Area Number: 26420289
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Japan Atomic Energy Agency
• Principal Investigator: Yoshigoe Akitaka 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門 物質科学研究センター, 研究主幹 (00283490)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: Ge / 酸化 / 放射光 / 分子線 / 酸化物 / 表面化学 / 表面反応 / 反応ダイナミクス

Outline of Final Research Achievements

Ge is an attracting material for future nano-devices becasue of its high carrier mobility compared to Si. This study aimed to find out the reaction parameters to control Ge oxide formation and discover anomalous oxidation reactions for IV -group elements based on the precise measurements of synchrotron radiation photoelectron spectroscopy combined with supersonic molecular beams. As expected prior to this study, it was found that supersonic oxygen molecular beams induces to form the different oxidation states, which can not be realized only using thermal equilibrium gas. The valency of oxidation states and its oxygen translational energy dependence are considerably different from that of Si oxidation. We also succeeded to observe a molecularly adsorbed oxygen, which has been considered to be absent over three decades. We believe that our experimental results are important and useful to control nanoscale oxidation recations at surfaces for not only Ge but also Si.

Free Research Field

材料プロセス