2016 Fiscal Year Final Research Report
Fabrication of GaN-based resonant tunneling diodes and investigation of their terahertz oscillation
Project/Area Number |
26420332
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
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Research Institution | National Institute of Advanced Industrial Science and Technology |
Principal Investigator |
NAGASE Masanori 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (80399500)
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Project Period (FY) |
2014-04-01 – 2017-03-31
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Keywords | 窒化物半導体 / 共鳴トンネルダイオード / テラヘルツ波 / 双安定性 |
Outline of Final Research Achievements |
The fabrication method of GaN-based resonant tunneling diodes (GaN-based RTDs) was established to realize the high-performance terahertz oscillators utilizing wide-bandgap semiconductors. The mechanism for the bistability of GaN-based RTDs, which causes the hysteresis in the current-voltage characteristics, was clarified by realizing higher quality of GaN-based RTDs and higher precision of numerical simulations. The bistability of GaN-based RTDs, which hinders their terahertz oscillation, was successfully suppressed by the improvements based on the clarified mechanism, and the possibility of the realization of terahertz oscillators utilizing GaN-based RTDs was shown.
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Free Research Field |
半導体工学
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