Fabrication of GaN-based resonant tunneling diodes and investigation of their terahertz oscillation

2016 Fiscal Year Final Research Report

• Project/Area Number: 26420332
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: NAGASE Masanori 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (80399500)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 窒化物半導体 / 共鳴トンネルダイオード / テラヘルツ波 / 双安定性

Outline of Final Research Achievements

The fabrication method of GaN-based resonant tunneling diodes (GaN-based RTDs) was established to realize the high-performance terahertz oscillators utilizing wide-bandgap semiconductors. The mechanism for the bistability of GaN-based RTDs, which causes the hysteresis in the current-voltage characteristics, was clarified by realizing higher quality of GaN-based RTDs and higher precision of numerical simulations. The bistability of GaN-based RTDs, which hinders their terahertz oscillation, was successfully suppressed by the improvements based on the clarified mechanism, and the possibility of the realization of terahertz oscillators utilizing GaN-based RTDs was shown.

Free Research Field

半導体工学