In-situ analysis of potential distribution around interfaces between metals and semiconductors for the development of power devices

2016 Fiscal Year Final Research Report

• Project/Area Number: 26420671
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Physical properties of metals/Metal-base materials
• Research Institution: Japan Fine Ceramics Center
• Principal Investigator: KATO Takeharu 一般財団法人ファインセラミックスセンター, その他部局等, 主任研究員 (90399600)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 電位分布 / ショットキー障壁 / 金属／半導体 / 空乏層 / 電子線ホログラフィー

Outline of Final Research Achievements

In order to apply electric voltage to the interface between the metals and semiconductors, supports of TEM samples composed of an alumina plate and titanium foils was fabricated. Samples including the interface between the metals and semiconductors were fixed on the edge of the supports. We developed TEM sample preparation technique with uniform thickness and no damage, and electrical wiring technique applying electrical voltage to the interface between the metals and the semiconductors. Current-voltage characteristics were measured from the above TEM samples applying the forward bias or reversed bias. The relationships between the applying voltages and the thickness of depletion layers could be clarified using electron holography, which could indicate the potential distribution in the semiconductors at the vicinity of the metals interface.

Free Research Field

工学