Self organized graphene wire grown on atmic flat stepped substrate

2016 Fiscal Year Final Research Report

• Project/Area Number: 26420692
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: Kanagawa Industrial Technology Center
• Principal Investigator: Kaneko Satoru 神奈川県産業技術センター, 電子技術部, 主任研究員 (40426359)
• Research Collaborator: SATOH Kazuo 大阪産業技術総合研究所, 電子機械システム, 主幹研究員
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: グラフェン / レーザー蒸着法 / 二酸化炭素

Outline of Final Research Achievements

After the discovery of graphene, variety of application is expected, however, it requires more than 1,000 C of substrate temperature, and metal catalyst, many study has been still explored to find better method of making graphene.
In this study, we used oxygen atmosphere to deposited graphene by pulsed laser deposition method. In oxygen atmosphere, at high temperature of substrate, oxidative etching must be dominant and result in severe oxidization and quite slow deposition rate. Carbon dioxides was employed instead of oxygen, and layer by layer growth was observed by atomic force microscopy (AFM). While film transfer is usually required by one prepared on metal catalyst, this method skip the transfer from catalyst since this method offer direct growth on insulating substrate. Carbon dioxides is known as oxidant.

Free Research Field

薄膜、微細加工