Precise purity evaluation and super high purification of semiconducting single wall carbon nanotubes

2015 Fiscal Year Final Research Report

• Project/Area Number: 26600018
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nanostructural physics
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Tanaka Takeshi 国立研究開発法人産業技術総合研究所, ナノ材料研究部門, 主任研究員 (30415707)
• Co-Investigator(Renkei-kenkyūsha): FUJII Shunjiro 国立研究開発法人 産業技術総合研究所, ナノ材料研究部門 CNT機能制御グループ, 主任研究員 (80586347)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: カーボンナノチューブ / 半導体型 / 純度評価

Outline of Final Research Achievements

We succeeded in the improvement in the purity of semiconducting single wall carbon nanotubes by removing metallic carbon nanotubes using gel. Although metallic carbon nanotubes contaminated in the semiconducting nanotube sample could not detected by optical measurement, after the treatment, we could detect the metallic nanotubes. This result indicates that it is possible to determine the very high purity of semiconducting carbon nanotubes. Because the recovery yield was not sufficient to determine the purity precisely, further examination were needed. While, we found another method that enable us to concentrate and extract metallic carbon nanotubes. The method could improve the purity evaluation method developed in this study.

Free Research Field

複合新領域、ナノ材料科学