Fabrication of multi-component oxide using supercritical fluid deposition for ferroelectric random access memory

2016 Fiscal Year Final Research Report

• Project/Area Number: 26600040
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nanomaterials engineering
• Research Institution: The University of Tokyo
• Principal Investigator: Momose Takeshi 東京大学, 大学院工学系研究科(工学部), 講師 (10611163)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 強誘電体薄膜 / 3次元メモリ / 超臨界流体 / 製膜

Outline of Final Research Achievements

For improving the integration density of ferroelectric random access memory, fabrication of ferroelectric film onto 3-dimensional features with high growth rate and high conformality is mandatory. We therefore studied supercritical fluid deposition (SCFD). Via quantitative evaluation of its reaction kinetics and transport properties, TiO2 deposition with high growth rate and high conformality was achieved. Then, deposition of Bi4Ti3O12 (BiT) was enabled by adding a Bi precursor to TiO2-SCFD, in which BiT film formation with uniform film thickness and chemical composition was successful onto high-aspect-ratio features. We then studied SCFD of RuO2 for electrode formation and post-anneal of BiT to improve its crystallinity, and thereby achieved the stacked layer structure composed of BiT and RuO2 onto high-aspect-ratio features.

Free Research Field

反応工学