Readout Technology of MEMS Sensors Installed in High Temperature Environments

2015 Fiscal Year Final Research Report

• Project/Area Number: 26600056
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nano/Microsystems
• Research Institution: Tohoku University
• Principal Investigator: Tanaka Shuji 東北大学, 工学(系)研究科(研究院), 教授 (00312611)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 高温センサ / 信号読出し / SiCダイオード / ブリッジ回路 / 高温実装技術 / MEMS

Outline of Final Research Achievements

A readout technology of capacitive MEMS sensors installed in high temperature (several hundred degree C) environments was developed. A heat-resistive capacitive MEMS sensor, a SiC diode bridge and coupling capacitors are installed in a high temperature environment, and connected to a Si-based signal processing circuit installed in a low temperature environment by an extension wire.
Pn-junction SiC diodes were metalized with Pt and successfully tested at 400-600 degree C. The diode characteristics were obtained at different temperatures. Special high-temperature Jisso technology including die bonding and wire bonding was developed. Based on this technology, a SiC diode bridge circuit was constructed and successfully tested at high temperature. In addition, SiC microfabrication technology was studied, and a fundamental sensor structure was fabricated.

Free Research Field

MEMS