Fabrication of Si-LSI compatible Ge nanowires for ultra-high-speed transistors

2016 Fiscal Year Final Research Report

• Project/Area Number: 26600083
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: University of Tsukuba
• Principal Investigator: TOKO Kaoru 筑波大学, 数理物質系, 助教 (30611280)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: ナノワイヤ / ゲルマニウム / 結晶成長

Outline of Final Research Achievements

This study proposes a way to fabricate Ge nanowires (NWs) on insulators at low temperature for improving Si-LSIs. We merged “Al-induced crystallization” growing a (111)-oriented Ge thin film and “Vapor-Liquid-Solid growth” fabricating Ge-NWs on single-crystal substrates. As a result, we successfully synthesized vertically aligned Ge-NWs on a SiO2 substrate and even on a plastic film. This is the first accomplishment allowing semiconductor NWs to be aligned on insulating substrates.

Free Research Field

半導体工学