2016 Fiscal Year Final Research Report
Growth of BN on graphene by RF-MBE
| Project/Area Number |
26600088
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Crystal engineering
|
|---|
| Research Institution | Waseda University |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2014-04-01 – 2017-03-31
|
| Keywords | グラフェン / 窒化物半導体 / AlN / BN |
|---|
| Outline of Final Research Achievements |
We focused on the wide-bandgap nitride semiconductors as an insulating thin layer for epitaxial graphene on SiC to fabricate graphene electronic devices. First, a thin AlN layer was grown on the graphene by RF-MBE. It was found that the AlN surface became smooth at lower growth temperatures and that the atomic steps formed on the graphene surface was observed. It was also found that the lower temperature suppressed a decrease in electron mobility and an increase in electron concentration to some extent.
Next, the N2-plasma was irradiated to the graphene surface at 800 ℃. It was found that the N2-plasma broke the graphene structure at high temperatures.
Then, BN was also grown on the graphene at a lower temperature. It suppressed the decrease in electron mobility and increase in electron concentration to some extent.
|
| Free Research Field |
結晶工学
|
