2016 Fiscal Year Final Research Report
Growth of GaN template substrate by flow-assisted-mode liquid phase epitaxy
| Project/Area Number |
26600089
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Meijo University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | 液相成長 / 窒化ガリウム / 流速支援 / 回転攪拌 / メサ加工基板 / マイクロチャンネルエピタキシー / 転位低減化 / 横方向成長 |
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| Outline of Final Research Achievements |
In order to realize flow-assisted-mode liquid phase epitaxy of GaN, the following processes were pursuit; design and trial fabrication of boat by the aide of 3D printer, modification of normal LPE system, optimization of growth conditions. With mechanically generated a convection in the solution by a rotating wheel, it was succeeded in a very flat and uniform growth of GaN layer with the growth rate of 0.5 um/h under atmospheric pressure without using any additives in the solution. At the same time, we have succeeded in a very-flat lateral growth of c-plane GaN by liquid phase electro epitaxy by using mesa-shaped GaN template substrate. The growth of the very-wide and flat GaN layer was successfully obtained to combine the adjoining laterally grown layers.
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| Free Research Field |
結晶成長
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