Dislocation passivation in InGaN by intentinally using immiscible nature during MBE growth by DERI method

2016 Fiscal Year Final Research Report

• Project/Area Number: 26600090
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: Ritsumeikan University
• Principal Investigator: NANISHI YASUSHI 立命館大学, 理工学部, 授業担当講師 (40268157)
• Co-Investigator(Renkei-kenkyūsha): SUDA Jun 京都大学, 大学院工学研究科, 准教授 (00293887) ; AKASAKA Tetsuya 日本電信電話株式会社, NTT物性科学基礎研究所・機能物質科学研究部, 主任研究員 (90393735) ; YAMAGUCHI Tomohiro 工学院大学, 先進工学部, 准教授 (50454517)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: InN / InGaN / 窒化物半導体 / 混晶組成 / 極微領域評価 / MBE / 転位 / リーク電流

Outline of Final Research Achievements

InGaN alloys are currently widely used as active layers of blue LEDs. Optical and electronic characteristics are degraded dramatically, however, when we increase In composition to fabricate green, red and infra-red LEDs due to generation of dislocations. In this study, we tried to suppress this dislocation effect by using DERI method, newly developed RF-MBE growth method by us, for high quality InN growth. Intentionally utilizing immiscible nature of InGaN alloys, we grew Ga-rich InGaN surrounding dislocations with wider bandgap. It was found that leakage current due to dislocation was suppressed as expected by conductive AFM measurements.

Free Research Field

化合物半導体結晶成長およびデバイス