Fabrication of completely feffomagnetic pn junction diode based on iron oxide thin films

2015 Fiscal Year Final Research Report

• Project/Area Number: 26600092
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: The University of Tokyo
• Principal Investigator: Seki Munetoshi 東京大学, 工学(系)研究科(研究院), 助教 (40432439)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 酸化鉄 / パルスレーザー堆積法 / 強磁性半導体 / 酸化物スピントロニクス

Outline of Final Research Achievements

Epitaxial thin films of iron oxides with high spin polarization were fabricated using pulsed laser deposition toward the spin rectifying devices. Single crystalline-Si-substituted Fe2O3 thin films were formed using two-step laser ablation technique. They exhibited ferromagnetic behavior and spin polarization of 31% at room temperature. We also succeeded in fabricating the epitaxial thin films of p-type transparent Si:FeO using pulsed laser deposition. In the double layer structure of Fe3O4/Si:FeO, spin-polarized carriers were injected into the Si:FeO layer from the Fe3O4 ferromagnetic layer at room temperature.

Free Research Field

機能材料科学