Creation of semiconductor surface for the next generation by catalytic tool free from metallic element

2015 Fiscal Year Final Research Report

• Project/Area Number: 26630026
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Production engineering/Processing studies
• Research Institution: Osaka University
• Principal Investigator: ARIMA KENTA 大阪大学, 工学(系)研究科(研究院), 准教授 (10324807)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 表面工学 / 超精密加工 / 電気化学

Outline of Final Research Achievements

The purpose of this study is to develop a non-metallic catalytic tool to remove protrusions selectively on a semiconductor surface by chemical interactions. We first need to find a catalyst that can etch a semiconductor surface effectively. In this research period, I obtained the results shown below.
(1) I performed electrochemical measurements based on cyclic voltammetry to evaluate catalytic activities of materials. And I confirmed that graphene-based catalysts are promising for our project. (2) I have developed a method to deposit a graphene flake on a semiconductor surface. And I performed atomic force microscopy observations in water and found that a semiconductor surface around the deposited flakes is selectively etched.
These results will help me to develop a non-metallic catalytic tool with high performances.

Free Research Field

半導体プロセス