Ultra-low power consumption devices utilizing new two-dimensional diamond film

2015 Fiscal Year Final Research Report

• Project/Area Number: 26630125
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Hatano Mutsuko 東京工業大学, 理工学研究科, 教授 (00417007)
• Co-Investigator(Renkei-kenkyūsha): IWASAKI Takayuki 東京工業大学, 大学院理工学研究科, 助教 (80454031) ; MATSUTANI Akihiro 東京工業大学, 技術部, 技術職員 (40397047)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 電子・電気材料

Outline of Final Research Achievements

We realize the spin state control of graphene to obtain ultra-low power / functional devices. Graphene is employed as the platforms of spin state control because of small spin-orbit interaction. The key for the spin state
control is the introduction of paramagnetic impurities. The fluorine impurity controlled the charge and spin current in graphene and we call diamond-sheet. Magnetotransport measurements suggests that spin relaxation time could be controllable by one order of magnitude by gate voltages.
We have also tried to observe spin Hall effect using non-local resistance measurement of Hallbar device. We found the possibility of the existence of spin Hall effect in diamond-sheet. Further evidence should be provided in the future by using highly sensitive magnetic sensor consists of NV centers in diamond.

Free Research Field

工学