2015 Fiscal Year Final Research Report
Development of nonvolatile Fe-ReRAM and study on the operation mechanism
| Project/Area Number |
26630126
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Kanazawa University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
KAWAE Takeshi 金沢大学, 理工研究域, 准教授 (30401897)
|
|---|
| Project Period (FY) |
2014-04-01 – 2016-03-31
|
| Keywords | 強誘電体 / 不揮発メモリ / 抵抗変化型メモリ / 希土類添加ビスマス鉄酸化物 / 書き込み / 読み出し / 保持特性 / 疲労特性 |
|---|
| Outline of Final Research Achievements |
Nd-doped BiFeO3(BNF) ferroelectric films were deposited and a novel ReRAMs (Fe-ReRAMs) were fabricated.
The maximum ON/OFF ratio of the leakage current was around 1000. Moreover, the observed resistive switching behavior is ascribed to ferroelectric polarization since the leakage current was changed by ferroelectric polarization direction and their value. Fabricated Fe-ReRAM was found to achieve the ON/OFF ratio of the leakage current around 1000 even by the writing time of 30 μs. In general, ferroelectric polarization reversal is known to have a switching speed of the order of nanoseconds when the memory capacitor is reduced to submicron size. Therefore, the Fe-ReRAM is expected to have a switching speed of the order of nanoseconds. Moreover, the present ReRAM showed a retention time of 10,000 s and a fatigue endurance of 100,000 cycles. At present, these properties are not sufficient to application to the next generation memory and a further improvements are required.
|
| Free Research Field |
電子材料デバイス
|
