2015 Fiscal Year Final Research Report
Study on thermoelectric conversion material fabricated by the periodic nanostructure of strained silicon
| Project/Area Number |
26630129
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyoto University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Keywords | 半導体超微細化 / 半導体物性 / 光物性 / 高性能レーザー / 廃熱利用 |
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| Outline of Final Research Achievements |
In order to fabricate a thermoelectric conversion material composed of crystalline silicon, the strained silicon structure with the width of 100 nm were successfully photoinduced by the irradiation of IR femtosecond laser double pulses. The self-assembled nanostructures of strained silicon inside Si crystal could be formed via interactions between the electron plasma excited by the first arrival pulse with the electric field of the secondary arrival pulse. Such periodic nanostructures composed of the strained silicon indicate higher electrical and lower thermal conductivities.
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| Free Research Field |
無機材料化学
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