Development for High-Performance Tunnel Transistors with Direct-Transition Band Structure of Ge

2015 Fiscal Year Final Research Report

• Project/Area Number: 26630133
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu University
• Principal Investigator: SADOH Taizoh 九州大学, システム情報科学研究科(研究院, 准教授 (20274491)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 電子・電気材料 / 半導体 / Si系ヘテロ材料

Outline of Final Research Achievements

High-performance tunnel transistors are required to realize large-scale integrated circuits (LSIs) with low-power consumption. However, on-current of the conventional Si tunnel transistors is low, though off-current can be decreased. In the present study, to achieve high-performance tunnel transistors, techniques for strain-introduction have been developed to obtain direct-transition band structures of Ge. In addition, a technique for high-concentration doping into Ge has been investigated. These techniques will facilitate formation of high-performance tunnel transistors with high on-current.

Free Research Field

工学