Nanofabrication and application of electronic devices in two-dimensional atomic layer materials

2014 Fiscal Year Final Research Report

• Project/Area Number: 26630139
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: MORIYAMA Satoshi 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, MANA独立研究者 (00415324)
• Project Period (FY): 2014-04-01 – 2015-03-31
• Keywords: グラフェン / 量子ホール効果 / ナノ材料 / 薄膜・量子構造 / 酸化イットリウム

Outline of Final Research Achievements

In the present study, we attempted to develop suitable substrates for two-dimensional atomic layer materials toward the application of electronic devices, and fabricated the nano-devices on the novel substrate. We adopted the Yttrium oxide (Y-O)/graphite as substrate materials, and the substrate was fabricated. Single-layer graphene was transferred on this substrate, and the device structures were designed. The graphite substrate used as a back gate electrode. From the four-terminal measurent of the devices, we observed the integer quantum Hall effect of a single-layer graphene, and estimated the mobility equal with on the oxidized silicon substrate, high carrier density modulation as a function of the back gate voltage. These results indicate that the Y-O/graphite structure is useful as the substrate for two-dimensional atomic layer materials.

Free Research Field

工学