Development of silicon quantum dot devices toward quantum information transfer

2015 Fiscal Year Final Research Report

• Project/Area Number: 26630151
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Kodera Tetsuo 東京工業大学, 理工学研究科, 准教授 (00466856)
• Research Collaborator: HORIBE Kosuke ; NOGUCHI Tomohiro ; ANDREEV Aleksey
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 量子デバイス / スピンデバイス / 量子情報 / 量子ドット

Outline of Final Research Achievements

We developed silicon quantum dot devices toward quantum optical communication in the future. We fabricated silicon coupled two quantum dots with different sizes and realized quantum states with different quantum energies in each quantum dot. We also realized stable silicon quantum dots using an ultrathin silicon layer. We demonstrated large charging energy of the quantum dots, which is desirable for the stability during application of photons.
We published these achievements in several journals, international conferences, and domestic conferences.

Free Research Field

量子技術、固体物性、電子デバイス