Study of 300GHz-band high-gain high-efficiency wide-band planar antennas using silicon process

2015 Fiscal Year Final Research Report

• Project/Area Number: 26630171
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Communication/Network engineering
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Hirokawa Jiro 東京工業大学, 理工学研究科, 教授 (00228826)
• Co-Investigator(Kenkyū-buntansha): Nagatsuma Tadao 大阪大学, 基礎工学研究科, 教授 (00452417)
• Co-Investigator(Renkei-kenkyūsha): Ando Makoto 東京工業大学, 大学院理工学研究科, 教授 (90159533) ; Zhang Miao 東京工業大学, 大学院理工学研究科, 産学官連携研究員 (90535866)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: アンテナ / サブミリ波

Outline of Final Research Achievements

300GHz-band plate-laminated double-layer hollow-waveguide corporate-feed 16x16-slot array antennas have been designed for uniform excitation at 350GHz and fabricated by silicon process with tolerance of about several micrometers. Five silicon wafers with 4-inch diameter and 0.2mm thickness are used. 3dB-down gain bandwidth is about 10% (35GHz) in measurements.
Close-proximity communication has been done by facing two antennas to each other. By phase modulation, stable communication not affected by a standing waveguide is confirmed in a range of 0-10mm by theory and measurement.

Free Research Field

電気電子工学