Development of CNT-strain device with MEMS technique and electronic state control

2015 Fiscal Year Final Research Report

• Project/Area Number: 26630300
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Physical properties of metals/Metal-base materials
• Research Institution: Keio University
• Principal Investigator: Maki Hideyuki 慶應義塾大学, 理工学部, 准教授 (10339715)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: カーボンナノチューブ / 半導体物性 / 光物性

Outline of Final Research Achievements

For conventional semiconducting materials, band-gap engineering is realized by the composition control and doping. In this study, we focused on carbon nanotubes as a new material for band-gap engineering. We developed a strain device with MEMS technology, and we established the band-gap modulation technique with strain. We fabricated the CNT-strain devices, and we observed the emission wavelength shift under strain.

Free Research Field

半導体工学