2015 Fiscal Year Final Research Report
Improvement of Thermoelectric Properties in Mg2Si by Strain State Control
| Project/Area Number |
26630304
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
FUNAKUBO Hiroshi 東京工業大学, 総合理工学研究科(研究院), 教授 (90219080)
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| Co-Investigator(Kenkyū-buntansha) |
AKIYAMA Kensuke 神奈川県産業技術センター, 研究員 (70426360)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Keywords | Mg2Si / 熱電測定 / 格子歪 |
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| Outline of Final Research Achievements |
Effect of residual strain on the thermoelectric properties of Mg2Si films was investigated. Strain from 0.2% tensile to 0.4% compressive was successfully remained by changing the kinds of substrates. However, noticeable change was not detected.
Mg-Ca-Si films were also prepared. Films with Si excess composition showed n-type conduction, while films with other composition showed p-type conduction. Thermoelectric properties strongly depend on film composition. However Ca-substituted Mg2Si did not show any noticeable improvement of thermoelectric properties.
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| Free Research Field |
無機薄膜
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