Creation of thin films with non-equilibrium crystal structure by self-assembled hetero-epitaxy

2016 Fiscal Year Final Research Report

• Project/Area Number: 26630362
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Material processing/Microstructural control engineering
• Research Institution: University of Toyama
• Principal Investigator: Matsuda Kenji 富山大学, 大学院理工学研究部(工学), 教授 (00209553)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: TiON膜 / TiO2 / 単斜晶 / ルチル型TiO2 / 光吸収スペクトル

Outline of Final Research Achievements

Using differential pressure sputtering (DPS) apparatus in which sputtering atmosphere of both sides chamber can be controlled independently, we have tried to prepare double layered films consisting of nitride and oxy-nitride films in order to create a new non-equilibrium crystalline phase by hetero-epitaxy between metal nitride layer and metal oxy-nitride layer.
In the case of AlN (lower)/AlON (upper) double layered films, Al6O3N4 phase in the upper layer was obtained under atmosphere over 0.04 Pa of nitrogen partial pressure. C-axis of the AlN phase was parallel to the direction of film growth. In contrast, c-axis of the AlON phase of the upper layer was almost perpendicular to these directions. On the other hand, a new TiON phase containing TiO0.34N0.74 even in a single layered film. But, it was difficult to control structure of TiON films of upper layer by self-assembled hetero-epitaxy in the case of TiN (lower)/TiON (upper) double layered films.

Free Research Field

材料組織制御工学