2017 Fiscal Year Final Research Report
Development of AlN growth technique using Ga-Al flux
| Project/Area Number |
26706013
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2018-03-31
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| Keywords | 液相成長 / 窒化アルミニウム / 融液熱物性 |
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| Outline of Final Research Achievements |
Aluminum nitride single crystal is a promising substrate material for AlGaN-based light emitting diodes. Recently, we have developed an original liquid phase epitaxial technique using a Ga-Al flux. In this project, the effects of growth conditions on the AlN growth were investigated. Moreover, nitrogen solubility of the Ga-Al flux and thermophysical properties of the Ga-Al flux were also investigated. Based on the results of this project, crystal growth mechanism for the Ga-Al liquid phase epitaxy was discussed.
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| Free Research Field |
結晶成長
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