Development of new structures of silicon quantum dots toward quantum spin information devices

2017 Fiscal Year Final Research Report

• Project/Area Number: 26709023
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Kodera Tetsuo 東京工業大学, 工学院, 准教授 (00466856)
• Research Collaborator: HORIBE Kosuke ; YAMAOKA Yu ; ANDREEV Aleksey ; MIZOKUCHI Raisei
• Project Period (FY): 2014-04-01 – 2018-03-31
• Keywords: 量子デバイス / スピンデバイス / 量子情報 / 量子ドット

Outline of Final Research Achievements

The purpose of this research was to develop silicon quantum dots of new structure, to elucidate the physics of spin-based quantum computation and to realize basic technologies for hardware. In the future we aimed to fuse existing silicon technology and quantum computer. In physics, spin relaxation mechanism peculiar to silicon quantum dot structure, electron transport characteristics involving valleys and spins were clarified. As a technique, unique quantum dot structure using Si substrate or Si / SiGe hetero substrate was fabricated. We also developed a spin manipulation technique and detection method suitable for new structures of silicon quantum dots using Si MOS type quantum dots or SiGe hetero substrates type quantum dots.

Free Research Field

量子技術、固体物性、電子デバイス