Elucidation of the formation mechanisms of epitaxial silicene

2015 Fiscal Year Final Research Report

• Project/Area Number: 26790005
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Nanostructural physics
• Research Institution: Japan Advanced Institute of Science and Technology
• Principal Investigator: Fleurence Antoine 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 助教 (30628821)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: シリセン

Outline of Final Research Achievements

In reason of their flexibility and their low-dimensionality that allows for the miniaturization of the devices, two-dimensional materials are of high interest for applications in electronics. Silicene is a recently discovered two-dimensional form of silicon with great expectation for applications owing to the electronic properties originating from its buckled structure. However, silicene needs to be stabilized by a substrate and was observed only on top of a very few number of conductive materials, that hinders its use in electronic devices. The spontaneous formation of silicene on top of Zr diboride thin films grown on Si(111) was investigated in order to get hints on the surface properties required to synthetize silicene on insulating substrates. This form of silicene is also a perfect template to study the thermal stability of silicene. The temperature dependence of its structure gave very insightful information on the mechanical properties of silicene deriving from the buckling.

Free Research Field

ナノマテリアル