2016 Fiscal Year Annual Research Report
Investigation of co-doped GaAs:NSb/AlGaAs IBSC with ideal transition energies for high efficiency Solar Cells
| Project/Area Number |
26790007
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
エルボーグ マーティン 国立研究開発法人物質・材料研究機構, 若手国際研究者センター(ICYS), ICYS研究員 (60724630)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | 太陽電池 / 量子構造 / MBE, エピタキシャル / GaNAs |
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| Outline of Annual Research Achievements |
We study dilute-N GaAs quantum wells (QW) to realize the proposed Intermediate Band Solar Cell concept for conversion efficiencies beyond the Schokley-Queisser limit of single-junction solar cells. Main achievements:
(1) understanding the optical properties of dilute-N GaAs QWs, (2) optimizing the epitaxial growth for optimal transition energy and high crystal quality, (3) realizing high open-circuit voltage of a GaNAs/AlGaAs QW embedded solar cell which exceeds the maximum theoretically achievable open-circuit voltage of an equivalent solar cell with a single band gap of an energy of that of the GaNAs QW transition, and (4) probing confined carriers by several capacitance spectroscopic techniques to analyze their energy states and behavior in terms of capture, recombination, and escape.
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