Analysis of lattice strain and controlling of interfacial characteristics in heterostructured-nanowires by synchrotron X-rays

2015 Fiscal Year Final Research Report

• Project/Area Number: 26790020
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Nanomaterials engineering
• Research Institution: Japan Atomic Energy Agency
• Principal Investigator: Sasaki Takuo 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 研究員 (90586190)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 分子線エピタキシー / ナノワイヤ / 放射光X線回折 / その場測定 / インジウムガリウム砒素

Outline of Final Research Achievements

Influence of indium supply on growth dynamics of Au-catalysed InGaAs nanowires was studied by in situ X-ray diffraction. We found that supplying indium along with gallium results in an interruption of nanowire growth, and that the nanowires are gradually buried in the layer part of InGaAs. Low temperature growth is effective to avoid this interruption and maintain the nanowire growth. Moreover, we found that the indium composition in nanowires was lower than the supplying ratio.

Free Research Field

半導体結晶成長、放射光利用研究