Nanoscopic studies on the mechanism of the ferromagnetism in GaMnAs

2016 Fiscal Year Final Research Report

• Project/Area Number: 26790039
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: kaku shigeru 東京工業大学, 理学院, 助教 (80583137)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: スピントロニクス / 表面 / ナノ / 走査プローブ顕微鏡

Outline of Final Research Achievements

GaMnAs is one of the typical diluted magnetic semiconductors which have both natures of semiconductors and ferromagnetics. The mechanism of the ferromagnetism in GaMnAs has not been clarified perfectly until now. We have tried to measure the spin-polarized electronic structure whose understanding may be important clues to clarify the mechanism using by STM, SP-STM and BEEM from the nanoscopic perspective. The growth of the sample structure suiting with our BEEM measurement is so difficult that we cannot make it successful, while we could conduct a series of experiments with SP-STM technique. We compared the two different dI/dV spectra measured in cases of spin up and spin down of a GaMnAs, respectively.Since we got preliminary results and also some points that should be improved in the measurement methods, it is expected that these additional experiments will give us clearer understanding about the mechanism.

Free Research Field

スピントロニクス