In-situ observation of the graphene through the thermal decomposition of silicon carbide by shcrotron surface x-ray difraction

2015 Fiscal Year Final Research Report

• Project/Area Number: 26790045
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: Kwansei Gakuin University
• Principal Investigator: YOSHIDA MASAHIRO 関西学院大学, 理工学研究科, 博士研究員 (80634500)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 表面X線回折 / グラフェン / シリコンカーバイド / その場観察 / 放射光X線 / 結晶成長

Outline of Final Research Achievements

I have established the in-situ observation method by synchrotron surface x-ray diffraction in order to investigate surface/interface structures during the grphene growth through the thermal decomposition of silicon carbide(SiC). Firstly, I identified that Bragg peaks caused by SiC and/or graphene and a superstructure reflection caused by buffer layer lie at geometric positions. Subsequently, I performed the in-situ observation of the superstrucure reflection combining the custom-designed furnace, multi-axes diffractometer and two-dimensional detector PILATUS. I considered that obtained temperature changes of the peak profile were explained based on the growth model widely supported. As a result, I have successfully proved the practicality of the established in-situ method.

Free Research Field

結晶工学