Gate-induced redox reaction in an iron oxide based electric double layer transistor

2015 Fiscal Year Final Research Report

• Project/Area Number: 26790052
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Nagoya University
• Principal Investigator: Hatano Takafumi 名古屋大学, 工学(系)研究科(研究院), 助教 (00590069)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 薄膜・表面界面物性 / 鉄酸化物 / 電界効果

Outline of Final Research Achievements

By means of the special treatments at high temperatures such as annealing in Ozone ambient, several oxidized states are realized in an iron oxide of SrFeOx. Our goal is to realize this class of redox reaction without any special treatment. For this purpose, we adopt an ionic-liquid gating technique to SrFeO2.5 and realize the gate-induced redox reaction in a field effect transistor configuration at room temperatures.

Free Research Field

物質科学